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| DISCRETE SEMICONDUCTORS DATA SHEET J108; J109; J110 N-channel silicon junction FETs Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon junction FETs FEATURES * High speed switching * Interchangeability of drain and source connections * Low RDSon at zero gate voltage (<8 for J108). APPLICATIONS * Analog switches * Choppers and commutators. DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSoff PARAMETER drain-source voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 Ptot total power dissipation up to Tamb = 50 C VGS = 0; VDS = 5 V ID = 1 A; VDS = 5 V CONDITIONS handbook, halfpage 2 J108; J109; J110 PINNING - TO-92 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION 1 3 g MAM197 d s Fig.1 Simplified outline and symbol. MIN. - -3 -2 -0.5 80 40 10 - MAX. 25 -10 -6 -4 - - - 400 UNIT V V V V mA mA mA mW 1996 Jul 30 2 Philips Semiconductors Product specification N-channel silicon junction FETs LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VGSO VGDO IG Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage gate-drain voltage forward gate current (DC) total power dissipation storage temperature operating junction temperature up to Tamb = 50 C open drain open source CONDITIONS - - - - - J108; J109; J110 MIN. MAX. 25 -25 -25 50 400 150 150 V V V UNIT mA mW C C -65 - THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient VALUE 250 UNIT K/W STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGSoff PARAMETER gate-source breakdown voltage gate-source cut-off voltage J108 J109 J110 IDSS drain current J108 J109 J110 IGSS IDSX RDSon gate leakage current drain-source cut-off current drain-source on-state resistance J108 J109 J110 VGS = -15 V; VDS = 0 VGS = -10 V; VDS = 5 V VGS = 0; VDS = 100 mV - - - - - - 8 12 18 VGS = 0; VDS = 15 V 80 40 10 - - - - - - - - - - -3 3 mA mA mA nA nA CONDITIONS IG = -1 A; VDS = 0 ID = 1 A; VDS = 5 V -3 -2 -0.5 - - - -10 -6 -4 - MIN. - TYP. MAX. -25 V V V V V UNIT 1996 Jul 30 3 Philips Semiconductors Product specification N-channel silicon junction FETs DYNAMIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL Cis PARAMETER input capacitance CONDITIONS VDS = 0; VGS = -10 V; f = 1 MHz VDS = 0; VGS = 0; f = 1 MHz; Tamb = 25 C Crs td ton ts toff Note 1. Test conditions for switching times are as follows: VDD = 1.5 V; VGS = 0 to VGSoff (all types) VGSoff = -12 V; RL = 100 (J108) VGSoff = -7 V; RL = 100 (J109) VGSoff = -5 V; RL = 100 (J110). reverse transfer capacitance VDS = 0; VGS = -10 V; f = 1 MHz note 1 Switching times; see Fig.2 delay time turn-on time storage time turn-off time 2 4 4 6 J108; J109; J110 TYP. 15 50 8 MAX. 30 85 15 - - - - UNIT pF pF pF ns ns ns ns handbook, halfpage 50 10 F 0.1 F VDD 10 nF RL SAMPLING SCOPE 50 DUT 50 MGE773 Fig.2 Switching circuit. 1996 Jul 30 4 Philips Semiconductors Product specification N-channel silicon junction FETs J108; J109; J110 handbook, full pagewidth VGS = 0 V Vi 10% VGS off 90% toff ts 90% Vo 10% tf td ton tr MGE774 Fig.3 Input and output waveforms. 1996 Jul 30 5 Philips Semiconductors Product specification N-channel silicon junction FETs PACKAGE OUTLINE J108; J109; J110 andbook, full pagewidth 0.40 min 4.2 max 1.7 1.4 1 4.8 max 2.54 2 3 0.66 0.56 5.2 max 12.7 min 0.48 0.40 2.0 max (1) MBC014 - 1 Dimensions in mm. (1) Terminal dimensions in this zone are uncontrolled. Fig.4 TO-92 (SOT54). 1996 Jul 30 6 Philips Semiconductors Product specification N-channel silicon junction FETs DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values J108; J109; J110 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Jul 30 7 |
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